The Native Antigen Company
At the Native Antigen Company we are experts in the development and manufacturing of infectious d……...
The Ultim® Extreme offers best spatial resolution and low-energy performance for EDS in the SEM. Integration of Extreme electronics and windowless construction with optimized geometry and sensor design offers up to 15x greater sensitivity when compared to a traditional large-area SDD.
Work at energies below 2 kV todeliver sub-10 nm spatial resolution in bulk samples Detection and mapping of Li X-rays
Combine with immersion optics to gather high-sensitivity data at up to 30 kV without any compromise
Materials characterization at sub-1 kV
Overview
Ultim Extreme Silicon Drift Detector is a revolutionary solution for ultra-high-resolution FEG-SEM applications and provides better solutions than that offered by traditional micro- and nanoanalysis.
The Ultim Extreme is a windowless 100 mm2 version of Ultim intended to increase spatial resolution and sensitivity. It employs a radical geometry to optimize imaging as well as EDS performance in ultra-high-resolution FEG-SEMs while working at short working distance and low kV. With the use of Ultim Extreme, EDS resolution reaches that of the SEM.
Features
Best spatial resolution for SEM-EDS
Sub-10 nm element characterization in the FEG-SEM
Most accurate and fastest nano-characterization
Fast collection, real-time data processing from a bulk sample
Surface science sensitivity
Characterize surfaces in the SEM
Maximum light element sensitivity
New detectability levels for elements such as nitrogen, lithium and oxygen
Differentiation of materials at the lowest kV
Materials characterization of down to 1 kV
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