The Ultim Extreme Silicon Drift Detector for EDS in the SEM

With Ultim® Extreme, low-energy performance and ultimate spatial resolution are provided for EDS in the SEM. By integrating Extreme electronics and windowless construction with optimized sensor design and geometry, up to 15x greater sensitivity is offered in comparison to a traditional large-area SDD.

Materials characterization at sub-1 kV

Integrate with immersion optics to obtain high-sensitivity data at up to 30 kV with no compromiseDetection and mapping of Li X-rays Operate at energies below 2 kV to deliver sub-10 nm spatial resolution in bulk samples

Overview

Ultim Extreme Silicon Drift Detector, a ground-breaking solution for ultra-high-resolution FEG-SEM applications, offers solutions beyond traditional micro- and nanoanalysis.

The Ultim Extreme, a windowless 100 mm² version of Ultim, has been developed to improve spatial resolution and sensitivity. Using a radical geometry, it optimizes imaging and also EDS performance in ultra-high-resolution FEG-SEMs while operating at low kV and short working distance. Ultim Extreme can be used to achieve EDS resolution comparable to that of the SEM.

Features

Ultimate spatial resolution for SEM-EDS

Sub-10 nm element characterization in the FEG-SEM

Materials differentiation achieved at the lowest kV

Down to 1 kV materials characterization

Surface science sensitivity

Characterization of surfaces in the SEM

Extreme light element sensitivity

New levels of detectability for elements like lithium, oxygen, and nitrogen

Most accurate and rapid nano-characterization

Rapid collection, real-time data processing from a bulk sample