The Role of STW-10 in Semiconductor Processing

上海仪舶实验室自动化 25-01-23 12:47:35

The Role of STW-10 in Semiconductor Processing

The STW-10 automated plasma system has been crafted specifically for front-end semiconductor processing. It is the ideal tool for activating silicon surfaces prior to hybrid wafer bonding. The STW-10 accepts FOUPs containing 300 mm wafers or cassettes with dies on a tape frame. In terms of maximum throughput, the system can handle up to 60 wafers per hour.

Inside the STW-10, the Atomflo plasma system forges a uniform, particle-free, electrically neutral discharge that ensures no damage to CMOS integrated circuits.The hydrogen/argon plasma removes metal oxidation from copper, tin, and indium,while the oxygen/argon plasma strips away organic contamination.

The STW-10 has all the requiredfeatures for effective modern semiconductor fabrication:

Carrier RFID or barcode recognition

Cleanroom class 10 (ISO 4)

EFEM prepared for OHT or AGV factory handling

Meets all SEMI standards

SECS/GEM ready

Wafer alignment and carrier mapping

STA-10 - Automated Plasma System

Image Credit: Surfx Technologies, LLC

STW-10 Specifications

Wafer Size Options: 300 mm, 200 mm, 150 mm

Footprint (W * D * H): 2,024 × 2,900 × 2,180 mm, 79.7 × 114.2 × 85.8 inches

Product handling: FOUP, cassette, or both, Wafer, tape frame, or both

Patented plasma technology:

RF capacitive discharge

O2, H2, N2 plasma chemistry

Atmospheric argon plasma

The STW-10 is developed for precise plasma cleaning of semiconductor wafers, ensuring low damage, outstanding dependability, and traceability.

Source: Surfx Technologies, LLC

Facilities
Power supply 380 VAC, 3 P/N/PE, 25 A, 50/60 Hz
Normal power consumption 6 kW
Air supply (CDA) 0.4-0.6 MPa (60-90 psig), <280 LPM (<10 CFM)
Vacuum 450 – 600 mm Hg (17 – 24 inches Hg), 2 – 3.5 CMH (1.2 – 2.1 CFM)
Footprint (W*D*H) 2,024 x 2,900 x 2,180 mm (80 x 114 x 86 inches)
Weight 2,200 kg (4,850 lbs)
Exhaust (flange, factory flow required) Qty two 100 mm diameter, combined 600 CMH (350 CFM)
Machine specifications
Wafer size options 300 mm, 200 mm, 150 mm
Traceability RFID, character recognition, barcode scan carriers and substrates
Automated loader Dual FOUP, dual cassettes, or mixed
Carrier mapping Yes
Substrate handling EFEM, OHT, AGV ready
Factory communication SECS/GEM
Atomflo plasma specifications
RF Power 600 W at 27.12 MHz
Main plasma gas Argon (Ar)
Process gases Oxygen (O2), nitrogen (N2), or hydrogen (5.0 % H2 in Ar)
Process specifications
Nominal contact angle after plasma WCA < 10⁰ (native oxide on silicon wafer)
Plasma cleaning process O2 + Ar to remove organics, or H2 + Ar to remove metal oxidation

STA-10 - Automated Plasma System

Image Credit: Surfx Technologies, LLC

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