Hampton Hill Mining NL
Hampton Hill Mining NL listed on the ASX in 1994. The Company holds extensive tenements throughou……...

The STW-10 automated plasma system has been crafted specifically for front-end semiconductor processing. It is the ideal tool for activating silicon surfaces prior to hybrid wafer bonding. The STW-10 accepts FOUPs containing 300 mm wafers or cassettes with dies on a tape frame. In terms of maximum throughput, the system can handle up to 60 wafers per hour.
Inside the STW-10, the Atomflo™ plasma system forges a uniform, particle-free, electrically neutral discharge that ensures no damage to CMOS integrated circuits.The hydrogen/argon plasma removes metal oxidation from copper, tin, and indium,while the oxygen/argon plasma strips away organic contamination.
The STW-10 has all the requiredfeatures for effective modern semiconductor fabrication:
Carrier RFID or barcode recognition
Cleanroom class 10 (ISO 4)
EFEM prepared for OHT or AGV factory handling
Meets all SEMI standards
SECS/GEM ready
Wafer alignment and carrier mapping

Image Credit: Surfx Technologies, LLC
STW-10 Specifications
Wafer Size Options: 300 mm, 200 mm, 150 mm
Footprint (W * D * H): 2,024 × 2,900 × 2,180 mm, 79.7 × 114.2 × 85.8 inches
Product handling: FOUP, cassette, or both, Wafer, tape frame, or both
Patented plasma technology:
RF capacitive discharge
O2, H2, N2 plasma chemistry
Atmospheric argon plasma
The STW-10 is developed for precise plasma cleaning of semiconductor wafers, ensuring low damage, outstanding dependability, and traceability.
Source: Surfx Technologies, LLC
| Facilities | |
|---|---|
| Power supply | 380 VAC, 3 P/N/PE, 25 A, 50/60 Hz |
| Normal power consumption | 6 kW |
| Air supply (CDA) | 0.4-0.6 MPa (60-90 psig), <280 LPM (<10 CFM) |
| Vacuum | 450 – 600 mm Hg (17 – 24 inches Hg), 2 – 3.5 CMH (1.2 – 2.1 CFM) |
| Footprint (W*D*H) | 2,024 x 2,900 x 2,180 mm (80 x 114 x 86 inches) |
| Weight | 2,200 kg (4,850 lbs) |
| Exhaust (flange, factory flow required) | Qty two 100 mm diameter, combined 600 CMH (350 CFM) |
| Machine specifications | |
| Wafer size options | 300 mm, 200 mm, 150 mm |
| Traceability | RFID, character recognition, barcode scan carriers and substrates |
| Automated loader | Dual FOUP, dual cassettes, or mixed |
| Carrier mapping | Yes |
| Substrate handling | EFEM, OHT, AGV ready |
| Factory communication | SECS/GEM |
| Atomflo™ plasma specifications | |
| RF Power | 600 W at 27.12 MHz |
| Main plasma gas | Argon (Ar) |
| Process gases | Oxygen (O2), nitrogen (N2), or hydrogen (5.0 % H2 in Ar) |
| Process specifications | |
| Nominal contact angle after plasma | WCA < 10⁰ (native oxide on silicon wafer) |
| Plasma cleaning process | O2 + Ar to remove organics, or H2 + Ar to remove metal oxidation |

Image Credit: Surfx Technologies, LLC
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