Reactive Ion Etching (RIE) — PlasmaPro 100 RIE

The PlasmaPro 100 RIE modules from Oxford Instruments help deliver isotropic and anisotropic dry etching for a wide range of processes. These modules are ideal for research and production customers, providing a controlled environment that enhances process repeatability with load-lock and cassette-to-cassette options.

Compatible with all wafer sizes ranging up to 200 mm

Quick change between wafer sizes

Outstanding uniformity, high throughput, and high accuracy processes

Wide temperature range electrode, from−150 °C to 400 °C

In-situ chamber cleaning and end-pointing

Single-wafer or batch processing available with outstanding process control

High control of the gases and plasma power

Simple serviceability and low cost of ownership

Overview

Reactive Ion Etch (RIE) is a physical etch process. A rich plasma has been made just above the wafer, and the ions are expedited toward the surface to generate a highly powerful anisotropic etch.

Using a wafer-level RF source, gas penetrates the top of the chamber, where it is transformed into a reactive plasma at low pressure. The ions either interact with the sample to develop etch by-products or stay as unreacted species. All the unreacted species and by-products are removed from the chamber by the vacuum pump to maintain a rich and active plasma to maintain high etch rates.

The PlasmaPro 100 RIE gives reactive species to the substrate, having an even high conductance path via the chamber, thereby enabling a high gas flow to be utilized while low pressure is retained.

Image Credit: Oxford Instruments Plasma Technology

Features

Wide temperature range electrode (-150°C to +400°C)that can be cooled using liquid nitrogen, a fluid re-circulating chiller or resistively heated. An optional blow out and fluid exchange unit can automate the process of switching modes

A high pumping capacity gives a wide process pressure window

A fluid-controlled electrode that is powered by a recirculating chiller unit and provides excellent substrate temperature control

Single or double cassettes available with a variety of handler options

Reactive species to the substrate with a uniform high conductance path through the chamber

Wafer clamping with He backside cooling for optimum wafer temperature control

Option of a highly reliable vacuum transfer robot

Applications

Solid State Lasers InP etch

III-V etch processes

VCSEL GaAs/AlGaAs etch

RF device low damage GaN etch

SiO₂ and quartz etch

Metals like aluminum, chromium, titanium

Polymers and photoresists

Diamond-Like Carbon (DLC) deposition

Failure analysis dry etch de-processing ranging from packaged chip and die etch through to full 200 mm wafer etch

RIE of InP waveguide. Image Credit: Oxford Instruments Plasma Technology

70 nm Fused Silica lines 933 nm deep Cr mask. Image Credit: Courtesy of Cornell Nanoscience facility.

Dielectric metal etch. Image Credit: Courtesy of Atmel

Specifications

Cluster Load Lock Options

Clusterable with up to 4* process modules, including ALD, ICP, ALE, PECVD, CVD, Ion Beam Etch, and Ion Beam Deposition systems

Single wafer loading directly into the central handling unit or via an optional load station (needed for through-the-wall integration)

Multiple chambers can be in operation concurrently where processed wafers wait in the chamber until the load station is under vacuum and empty

*with MX600ss

Typical Conditions

5–500 mTorr operating pressure

5–200 sccm total gas flow

30–800 V DC bias generated on lower electrode

0.1–1.5 W/cm² power density

The substrate generally sits on a Quartz or graphite coverplate

Advanced Load Lock Options

Opening: Front held by gas struts with locking mechanism

Arm position control: Stepper motor

Wafer tracking: Yes

Dimensions: Compact dims. +80 mm wider, 90 mm longer. More appropriate for 200 mm wafers

Recommended for: Where positional accuracy is key to the application

Not recommended for: Transparent substrates