PlasmaPro 100 PECVD for Plasma Enhanced Chemical Vapor Deposition

The PlasmaPro 100 PECVD system from Oxford Instruments has beenspecifically designed to produce high-quality films that exhibitoutstanding uniformity and control of film properties like wet chemical etch rate, refractive index, stress, and electrical characteristics.

The advanced Plasma Enhanced CVD system is ideal for the passivation of dielectric films (for example, SixNy, SiO₂), amorphous silicon, silicon carbide, hard mask deposition, and anti-reflective coatings.

High-quality films, high throughput, and outstanding uniformity

High-density plasma and low-pressure deposition

Compatible with wafer sizes up to 200 mm

In-situ chamber cleaning and end-pointing

Simple serviceability and low cost of ownership

Outstanding control of refractive index and stress

Quick changebetween wafer sizes

Resistive heated electrodes with capability ranging from 400 °C to 1200 °C

Overview

PlasmaPro 100 PECVD offers outstanding low particle generation and conformal deposition as a result of the electrode temperature uniformity and shower head design in the electrode, thereby enabling RF energy to produce the plasma.

High deposition rates have been provided by the high-energy reactive species of plasma to obtain the preferred thickness of the substrate while low pressure is retained. Its dual frequency 13.56 MHz and 100 KHz power employed to the upper electrode allows for film densification and stress control.

Features

High pumping capacity provides extensive process pressure window

Delivers reactive species to the substrate with a uniform high conductance path via the chamber, which enables a high gas flow to be utilized while retaining low pressure

RF-powered showerhead with improved gas delivery offers even plasma processing with LF/RF switching, enabling accurate control of film stress

Applications

High-quality PECVD of silicon dioxide and silicon nitride available for photonics, passivation, dielectric layers, and several other uses

Amorphous silicon (a-Si:H) and poly-Si

Silicon Carbide (SiC)

Hard mask deposition and etch could be performed for high-brightness LED production

High rate SiO₂ PECVD. Image Credit: Oxford Instruments Plasma Technology

High rate SiO₂ PECVD. Image Credit: Oxford Instruments Plasma Technology

Specifications

Clustering can be done for up to four process modules

Resistive heated electrodes: ranges up to 400 °C or 1200 °C

Precursor delivery option:

Liquid or solid precursors available

Carrier gas assist, vapor draw, or bubbling modes

Can be heated up to 70 °C

Uses standard canisters from all significant precursor suppliers

Image Credit: Oxford Instruments–Plasma Technology