PlasmaPro 100 ICPCVD for Inductively Coupled Plasma Chemical Vapor Deposition (ICPCVD)

With the use of high-density distant plasmas, which generate better film quality with less substrate damage, this ICPCVD process module is intended to make high-quality films at low growth temperatures.

Highlights

Excellent uniformity, high throughput, and high precision processes

High-quality films

Wide temperature range electrode

Compatible with all wafer sizes up to 200 mm

Rapid change between wafer sizes

Low cost of ownership and ease of serviceability

Compact footprint, flexible layout

Resistive heated electrodes with capability up to 400 °C or 1200 °C

In-situ chamber cleaning and end-pointing

Flexible vapor delivery module enabling deposition of films using liquid precursors, e.g., TiO₂ using TTIP, SiO₂ using TEOS

Applications

At lower temperatures, excellent-quality, low-damage films are attainable

SiO₂, Si₃N₄, SiON, Si, and SiC are common materials that are deposited at substrate temperatures as low as 5 ºC

ICP source sizes of 65 mm, 180 mm, 300 mm deliver process uniformity up to 200 mm wafers

Electrodes available for temperatures ranging from 5 ºC–400 ºC

Patented ICPCVD gas distribution technology

In situ chamber cleaning with endpointing