Hiden's FIB-SIMS for Nano-Scale Materials Analysis

Hiden Analytical provides high-performance bolt-on secondary ion mass spectrometry (SIMS) for already-present focused ion beam (FIB) systems, offering excellent surface specificity and a naturally high dynamic range for the latest nanoscale material analysis. The FIB-SIMS systems are designed to improve users’ operations, from routine detection tasks to complicated sample preparation.

Overview

Nanoscale materials analysis cites an increasing domain of instruments concentrated on the identification of trace and ultra-trace elements down to the parts per million (ppm) range. This is crucial in high sensitivity 3D (three-dimensional) elemental mapping and depth profiling; both main methods of materials analysis for analytical and preparative materials identification applications.

Focused ion beam secondary ion mass spectrometry (FIB-SIMS) is one of the strongest materials identification methods in high sensitivity nanoscale materials analysis. It integrates the remarkable surface sensitivity of SIMS with a focused primary ion beam. This lays the groundwork for qualitative compositional analysis of the top-most nanolayers of materials of interest.

FIB-SIMS can offer critical elemental data depending on isotope and ion (atomic and molecular) detection, with an extensive range of ideal application areas.

Features

Nano-scale elemental surface mapping is available

3D depth profiling

Outstanding sensitivity and dynamic range

Tailored software interface

Materials analysis can be performed

“Feature MS” mode enables mass spectral data to be obtained from a particular area of interest, like a contaminant, grain boundary, etc.

Retractable extraction optics enables operation without interfering with other analysis equipment

Tailored mounting solutions for any FIB system

The Hiden SIMS Mapper software regulates the FIB beam, attaining elemental images and 3D depth profiles over the SEM’s field of view for nano-scale correlative microscopy.

Specifications

Offers <50 nm lateral resolution for surface mapping

Provides <20 nm depth resolution

Isotope detection (for example, ⁶⁹Ga, ⁷¹Ga)

Elemental mapping and depth profiling are available

Analysis of trace elements down to ppm levels (thin films, solar cells, semiconductors)

Detection of atomic and molecular ions (for example, Zr⁺ and ZrO⁺)