The Most Complete Image Analysis Solution
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The EQP instrument is a combined mass spectrometer and energy analyser that is used for the testing neutrals, neutral radicals and plasma ions.
It has operating modes for positive ion and negative ion analysis. Electron attachment ionisation and threshold ionisation modes are provided to enable detailed neutral radical analysis and for analysis of both electro-positive and electro-negative plasma radicals.
The EQP instrument also consists of integrated multi-channel scalar data acquisition with time resolution to 50ns, which enables rapid data acquisition for pulsed plasma applications.
Hiden plasma probes are present to measure certain essential plasma parameters and provide detailed data regarding plasma reaction chemistry.
The integral electron bombardment ion source assists in the analysis of neutrals as well as with the addition of the EAMS (electron attachment mass spectrometry) electron attachment mode, to achieve separation and identification of electronegative radical species.
Key Features
The main features of the EQP system are mentioned below:
Software-controlled ion extraction optics for minimum plasma perturbation
Minimal perturbation of ion flight path and constant ion transmission at all energies
45° electrostatic sector analyser, scans energy at 0.05 eV increments/ 0.25eV FWHM
Tuneable integral ioniser for appearance potential MS with electron attachment option
Differentially pumped triple filter quadrupole, mass range options to 2500amu
High sensitivity / stability pulse ion counting detector with seven decade dynamic range
Penning gauge and interlocks to provide over pressure protection
Signal gating and programmable signal gating option for time resolved studies in pulsed plasma
1000eV option, floating option up to 10keV, Faraday cup for high density plasmas
MASsoft control via RS232, RS485 or Ethernet LAN
Mu-Metal, radio-metal shielding options, high pressure operation option
Applications
The EQP system is used in the following areas:
Laser ablation
Ion implantation
Etching or deposition studies
Analysis of ions and radicals
Residual gas analysis
Plasma electrode coupling
Leak detection
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