DECTRIS PILATUS4 Detectors for Laboratories

上海仪舶实验室自动化 25-01-23 13:40:20

DECTRIS PILATUS4 Detectors for Laboratories

DECTRIS PILATUS4 R CdTe detectors allow quick data collection with their large active area of up to 155 × 162 mm andhigh quantum efficiency (over 95%)using any X-Ray source from Cu to In. For Ag, Mo, and In radiation, PILATUS4 R CdTe outperforms any HPC detector with a Si sensor—even PILATUS3, which has the thickest Si sensor available.

A dynamic range that spans 10 orders of magnitude is attained via PILATUS4’s superior count rates and the lack of detector background. Internal frame rates of up to 200 Hz enhance the count-rate correction and guarantee highly precise measurement of extreme intensities. PILATUS4 provides fresh possibilities in spectral imaging and Laue diffraction using four energy-discriminating thresholds.

Large andefficient: Active regions of a maximum of 155 × 162 mm, with a quantum efficiency of over 95%

Due to superior count rates, zero detector background, and concurrent read/write, the most extensive possible dynamic range is available.

Versatile: For polychromatic applications, four energy-discriminating thresholds are available; High quantum efficiency from Cu to In also exists

DECTRIS PILATUS4 R CdTe Detectors*

Source: DECTRIS AG

PILATUS4 R CdTe1M PILATUS4 R CdTe260K PILATUS4 R CdTe 260K-W
Active area(W x H) [mm²] 155.0 x 162.0 77.0 x 79.5 155.0 x 38.3
Pixel array(W x H) 1033 x 1080 513 x 530 1033 x 255
Pixel size(W x H) [µm²] 150 x 150
Energy range [keV] 8 - 25(8 - 100)1
Number of energythresholds 4
Threshold range [keV] 4 - 30(4 - 80)1
Count rate[ph/s/pixel] 5.0 * 106
Frame rate1(max.) [Hz] 10 100 100
Readout time2 Continuous readout
Sensor material Cadmium telluride (CdTe)
Sensor thickness [µm] 1000
Point-spread function(FWHM) [pixels] 1
Dimensions(W x H x D) [mm3] 235 x 237 x 372 114 x 133 x 242 114 x 92 x 242
Weight [kg] 15 4.7 4.7

*All specifications are subject to change without notice.1With optional calibration for an extended energy range.2The effective dead time between exposures is <100 ns (max. loss of 1 count/pixel).

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