Life Science Marketing Radio
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Crestec Corporation Ltd.
EB lithography systems for nanofabrication.There is less forwardscatter of EB resist due to higher acceleration voltage.CABL-UH model has more accuracy less than 10nm. You can select 90kV, 110kV or 130kV due to your budget.Beam diameter: <1.6 nmΦAccerelation Voltage: 130 kV, 110 kV or 90 kVStage size: 8 inch wafer (you can use any other wafers less than 8 inch wafer)
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