Atomic Layer Etching — PlasmaPro 100 ALE

The PlasmaPro 100 ALE from Oxford Instruments provides accurate process control of etching for next-generation semiconductor devices. The system's digital/cyclical etch process,specially designed for processes such as recess etching for GaN HEMT applications and nanoscale layer etching, ensures low damage, smooth surfaces.

Low damage

Smooth etch surface

Extensive range of processes and applications

Digital or cyclical etch process — etching comparable to ALD

Excellent etch depth control

Perfect for nanoscale layer etching (for example, 2D Materials)

Features

As layers become thinner to allow for the next-generation of semiconductor devices, there is a need for ever more precise process control to create and manipulate these layers. The PlasmaPro 100 ALE offers this by improving the Cobra ICP platform along with specialized hardware for atomic layer etching.

Provides reactive species to the substrate, with an even high conductance path through the chamber — Enables a high gas flow to be utilized while retaining low pressure

Variable height electrode — Utilises the 3-dimensional characteristics of the plasma and accommodates substrates up to 10 mm thick at optimum height

A fluid-controlled electrode fed by a re-circulating chiller unit — Outstanding substrate temperature control

Extensive temperature range electrode (−150 °C to +400 °C) which can be cooled using liquid nitrogen, a fluid re-circulating chiller, or resistively heated — An optional blowout and fluid exchange unit could automate the process of switching modes

ICP source sizes range around 65 mm, 180 mm, and 300 mm. It provides process uniformity up to 200 mm wafers

Wafer clamping with He backside cooling — Best wafer temperature control

RF-powered showerhead with improved gas delivery — Provides uniform plasma processing with LF/RF switching, allowing for the precise control of film stress

High pumping capacity — Provides extensive process pressure window

Applications

Low damage GaN HEMT recess etch for power electronics and RF devices

2D materials patterning or thinning

SiO₂ and quartz etch

Nanostructured SiO₂, Si, SiN

Solid-state lasers InP etch

III-V materials

VCSEL GaAs/AlGaAs etch

Hard mask deposition and etch for high-brightness LED production