Atomic Layer Deposition (ALD) — Atomfab

Atomfab from Oxford Instruments offers quick, low damage, low CoO production plasma ALD processing for GaN power and RF devices.

ATOMFAB ALD System - Oxford Instruments Plasma TechnologyPlay

Video Credit: Oxford Instruments Plasma Technology

PACE

Atomfab is known to be the quickest remote plasma production ALD system that is commercially available.

Solutions for Production Needs

Competitive CoO

Outstanding film uniformity

High material quality

Fast, easy maintenance

Quicker cycles times, high throughput

Clusterable and automated wafer handling

Low substrate damage

Image Credit: Oxford Instruments Plasma Technology

Performance

Atomfab's ALD technology providesaccurately controlled ultra‑thin films for sophisticated applications on the nanometer scale, with a conformal coating of sensitive substrate structures.

Process Benefits for Passivation of Power and Rf Devices

Plasma surface pre-treatments

High quality deposition with low film contamination

Low particle levels

Guaranteed processes setup by our engineers

Lifetime process support for additional/new processes

Low-damage plasma processing

Short plasma exposure times that allow for high throughput

Advantages of Plasma ALD for GaN, Power, and RF Devices

Remote plasma ALD with controlled ion energy from near zero to 30 eV

With plasma pre-treatment prior to deposition to enhance interface quality

Low damage, uniform deposition

ALD passivation, gate dielectric by Al₂O₃films

Increased throughput and improved uniformity to bring remote plasma ALD to production. Image Credit: Oxford Instruments Plasma Technology

Plasma

Revolutionary plasma source: Atomfab makes use of a patent-pending remote source that has been specifically developed for atomic-scale processing.

Low damage for sensitive substrates for utmost device performance

Short plasma times (250 milliseconds) enabled by patent-pending AMU

Low reflected power and reproducible strike time for high yield

Short strike time (80 milliseconds) for high throughput

Quick cycle times and reliability with even film deposition and plasma exposure

Image Credit: Oxford Instruments Plasma Technology