UV-Vis-NIR, Fluorescence and Raman of Microscopic Samples
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Atomfab from Oxford Instruments offers quick, low damage, low CoO production plasma ALD processing for GaN power and RF devices.
ATOMFAB ALD System - Oxford Instruments Plasma Technology
Video Credit: Oxford Instruments Plasma Technology
PACE
Atomfab is known to be the quickest remote plasma production ALD system that is commercially available.
Solutions for Production Needs
Competitive CoO
Outstanding film uniformity
High material quality
Fast, easy maintenance
Quicker cycles times, high throughput
Clusterable and automated wafer handling
Low substrate damage
Image Credit: Oxford Instruments Plasma Technology
Performance
Atomfab's ALD technology providesaccurately controlled ultra‑thin films for sophisticated applications on the nanometer scale, with a conformal coating of sensitive substrate structures.
Process Benefits for Passivation of Power and Rf Devices
Plasma surface pre-treatments
High quality deposition with low film contamination
Low particle levels
Guaranteed processes setup by our engineers
Lifetime process support for additional/new processes
Low-damage plasma processing
Short plasma exposure times that allow for high throughput
Advantages of Plasma ALD for GaN, Power, and RF Devices
Remote plasma ALD with controlled ion energy from near zero to 30 eV
With plasma pre-treatment prior to deposition to enhance interface quality
Low damage, uniform deposition
ALD passivation, gate dielectric by Al2O3films
Increased throughput and improved uniformity to bring remote plasma ALD to production. Image Credit: Oxford Instruments Plasma Technology
Plasma
Revolutionary plasma source: Atomfab makes use of a patent-pending remote source that has been specifically developed for atomic-scale processing.
Low damage for sensitive substrates for utmost device performance
Short plasma times (250 milliseconds) enabled by patent-pending AMU
Low reflected power and reproducible strike time for high yield
Short strike time (80 milliseconds) for high throughput
Quick cycle times and reliability with even film deposition and plasma exposure
Plasma ALD Al2O3at 300 °C | Specification |
---|---|
Within wafer thickness uniformity | <± 1.0% |
Wafer-to-wafer thickness repeatability | <± 1.0% |
Breakdown voltage | ≥ 7.0 MV/cm |
Image Credit: Oxford Instruments Plasma Technology
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