Advanced Plasma Processing: The PlasmaPro ASP

PlasmaPro ASP has been developed to guarantee high-quality materials that can be deposited quickly and with the flexibility to run numerous chemistries to produce outstanding layers for integration into devices. It is based on a production-proven platform for corporate/specialized R&D. For increased throughput and thicker films,the state-of-the-art plasma-enhanced ALD system provides flexibility, conformality, and tunability at a fast pace.

Enhanced serviceability and maintenance

Low volume chamber for speed

Low substrate damage

Higher process stability

Three timesfaster than conventional remote plasma

Lower precursor consumption, which lowers operating costs and is environmentally friendly

High material quality

Low cost of ownership

PlasmaPro ASP has shared platform with Atomfab to provide quick and low-damage remote plasma-enhanced ALD. In comparison to thermal ALD and direct plasma ALD, remote plasma ALD provides higher device performance. It is small to reduce the effective chamber capacity for quick gas exchangeand works throughout the whole 200 mm wafer diameter.

Image Credit: Oxford Instruments Plasma Technology

Image Credit: Oxford Instruments Plasma Technology

Features

Image Credit: Oxford Instruments Plasma Technology

High-speed remote plasma source

High and homogeneous radical density andlow ion energies for reduced damage and rapid saturation

PLC and AMU control enables quick striking

Excellent precursor and process control

Up to 6 precursors, bubbled or vapor drawn

Wafer electrode

200 mm wafer electrode with bias

Up to 400 °C deposition temperature

200 °C heated inner chamber

Control system

Simplified wiring and ease of service

Enhanced diagnostics for service

No distinct 'electronics'rack

Applications

Low damage GaN HEMT passivation forpower electronics and radio frequencydevices

Low damagegraphene encapsulationfor Datacom applications

Low-oxygen content conductive nitrides with all-metal plasma source facilitating rapid cycle durations, ideal for quantum devices

130 nm conformal superconducting NbN deposited in 8:1 aspect ratio trench using PlasmaPro ASP. Image Credit: Oxford Instruments Plasma Technology

450 nm conformal SiO₂ deposited in 32:1 aspect ratio trench using PlasmaPro ASP. Image Credit: Oxford Instruments Plasma Technology

Specifications

Source: Oxford Instruments Plasma Technology